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DMP4015SPS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-40
±25
Units
V
V
Continuous Drain Current (Note 6) V GS = -10V
Continuous Drain Current (Note 7) V GS = -10V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
Steady
State
t<10s
Steady
State
t<10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
I S
I AS
E AS
-8.5
-6.8
-13.0
-10.5
-11.0
-8.7
-17.0
-13.5
-100
-3.5
-22
242
A
A
A
A
A
A
A
mJ
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t<10s
T A = +25°C
T A = +70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1.3
0.8
96.4
40.6
2.1
1.4
55.0
24.0
4.15
-55 to +150
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-40
??
?
?
??
?
?
-1
? 100
V
μA
nA
V GS = 0V, I D = -250 μ A
V DS = -40V, V GS = 0V
V GS = ? 25V, V DS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
-1.5
?
?
?
?
-2.0
7
9
26
-0.7
-2.5
11 ?
15
?
-1.0
V
m ?
S
V
V DS = V GS , I D = -250 ? A
V GS = -10V, I D = -9.8A
V GS = -4.5V, I D = -9.8A
V DS = -20V, I D = -9.8A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
??
?
?
?
?
?
?
??
4234
1036
526
7.77
47.5
14.2
13.5
13.2
10.0
302.7
137.9
?
?
?
??
?
?
?
?
?
?
??
pF
?
nC ?
ns
V DS = -20V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = -20V, V GS = -5V
I D = -9.8A
V GS = -10V, V DD = -20V, R G = 6 ? ,
I D = -1A, R L = 20 ?
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP4015SPS
Document number: DS35518 Rev. 9 - 2
2 of 6
www.diodes.com
November 2013
? Diodes Incorporated
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